Journal of Physical Studies 7(2), 184–187 (2003) DOI: https://doi.org/10.30970/jps.07.184 THE INFLUENCE OF LEAD-IMPURITY ON RADIATION HARDNESS OF SILICON SINGLE CRYSTALS V. B. Neimash{1}, M. M. Krasko{1}, A. M. Kraitchinskii{1}, V. V. Voitovych{1}, V. V. Popov{2}, A. P. Pokanevich{2}, M. I. Gorodyskii{2}, O. M. Kabaldin{3}, V. M. Tsmots'{3} {1}Institute of Physics Nat. Acad. Sci. of Ukraine, Kyiv, 03022, Ukraine e-mail: vova@neimash.kiev.ua, {2}‟Mikroanalitycs" Center, Kyiv, 03022, Ukraine e-mail: popovmc@i.kiev.ua, {3}Joint Solid-State Microelectronics Laboratory of Nat. Acad. Sci. of Ukraine and the Ministry of Education and Science of Ukraine at Drohobych Ivan Franko State Pedagogical University 24 Franko Str., Drohobych, 82100, Ukraine, e-mail: administrator@drohobych.net

The analysis of the results obtained allows to make a conclusion that the isovalent Pb impurity doping of Cz-Si single crystals ($N_{\rm Pb}=(1-5)\cdot 10^{18}\mbox{cm}^{-3}$) does not effect essentially the electric and structural characteristics of the original material $n$-Si$\left<{\rm Pb}\right>$, this process slowing down considerably its conductivity degradation under electron irradiation. At the same time, such a doping slightly accelerates the minority carriers lifetime degradation under $γ$-irradiation. These results support the well-known mechanisms of isovalent impurity effect on Si behaviour under ionizing irradiation.

PACS number(s): 61.72.Cc, 61.82.Bg.

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