Journal of Physical Studies 10(3), 220–226 (2006) DOI: https://doi.org/10.30970/jps.10.220 A STUDY OF THE EFFECT OF POLARIZATION ON ELECTRON, HOLE AND EXCITON ENERGY SPECTRA OF Si/SiO2 AND β-HgS/CdS SPHERICAL SEMICONDUCTOR NANOHETEROSYSTEMS V. I. Boichuk, R. Yu. Kubay, H. M. Hodovanets, I. S. Shevchuk Institute for Physics, Mathematics and Computer Science, Drohobych I. Franko State Pedagogical University, Department of Theoretical Physics and Methods of Teaching Physics, 3 Stryis'ka St., Drohobych, 82100, e-mail: kubay-roman@rambler.ru, innashs@yahoo.com

Electron and hole energies of Si/SiO$_{2} $ and $β$-HgS/CdS spherical heterostructures are obtained with a particle-polarization charge interaction taken into account at the interface for non-degenerated bands in the framework of the effective mass approximation. It is shown that for structures with dielectric permittivity of the matrix less than that of the quantum dot the polarization effect enhances an effective mass gap. We should take it into account when analysing spectra of interband absorption or luminescence. In addition it is proved that successive account of polarization effects helps to explain an essential exciton binding energy increase of the heterostructures compared with massive semiconductors Si or $β$-HgS, respectively. It is also shown that an exciton formation energy increase due to the electron- and hole-interface interaction is weaker than a reduction due to the enhancement of the electron-hole interaction in these heterosystems in comparison with bulk crystals.

PACS number(s): 73.20.-r

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