Journal of Physical Studies 23(2), Article 2301 [7 pages] (2019)
DOI: https://doi.org/10.30970/jps.23.2301

ELECTRONIC STRUCTURE AND X-RAY SPECTROSCOPIC PROPERTIES OF THE HfFe2Si2 COMPOUND

I. D. Shcherba1, V. N. Antonov2, O. V. Zhak1, L. V. Bekenov2, M. V. Kovalska1, H. Noga3, D. Uskokovic4, B. M. Yatcyk5

1Ivan Franko National University of Lviv, 6/8, Kyryla i Mefodiya St., Lviv, UA-79005, Ukraine
2Institute of Metal Physics, NASU, 36, Vernadskyj St., Kyiv, UA-03142, Ukraine
3Institute of Technology, Pedagogical University, 2, Podchoranzych St., Krakow, 30084, Poland
4Institute of Technical Sciences of SASA, 35/IV, Knez Mihailova, Belgrade,PO Box 37711000, Serbia
5Lviv National University of Veterinary Medicine and Biotechnologies, Ukraine

The valence band electronic structure of HfFe$_2$Si$_2$ has been established for the first time based on X-ray emission spectroscopy measurements. The band structure and X-ray emission spectra have been also obtained theoretically using the ab initio LMTO method in the non-relativistic approximation. The electron configuration of Si in the compound HfFe$_2$Si$_2$ can be described as $s^{1.1}p^{1.5}$. The theoretical and experimental results are in satisfactory agreement.

PACS number(s): 32.30.-r, 71.20.Be

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