About us > Staff > Educational Laboratory of Nuclear Physics (Department of Solid State Physics)

Bohdan Sadovyj

Phone (office): (032) 239-46-01
Google Scholar profile: scholar.google.com

Research interests

  • high pressure physics,
  • semiconductor physics,
  • condense matter under high pressure,
  • gallium nitride,
  • crystallization from solution under high pressure,
  • optical spectroscopy,
  • X-ray diffraction analysis and X-ray absorption,
  • organic LED

Publications

  1. Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds / T.Sochacki, Z. Bryan, M. Amilusik, R. Collazo, B. Lucznik, J.L. Weyher, G. Nowak, B. Sadovyi, G. Kamler, R. Kucharski, M. Zajac, R. Doradzinski, R. Dwilinski, I. Grzegory, M. Bockowski, Z. Sitar // Applied Physics Express. – 2013. – V.  – Art. No 075504.
  2. Multi feed seed (MFS) high pressure crystallization of 1-2 in GaN / M. Bockowski, I. Grzegory, B. Lucznik, T. Sochacki, G. Nowak, Sadovyi, P. Strak, G. Kamler, E. Litwin-Staszewska, S. Porowski // Journal of Crystal Growth. – 2012. –V. 350. – p. 5-10.
  3. Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds / M.Amilusik, T. Sochacki, B. Lucznik, M. Fijalkowski, J. Smalc-Koziorowska, J.L. Weyher, H. Teisseyre, B. Sadovyi, M. Bockowski, I. Grzegory // Journal of Crystal Growth. – 2014. – V. 403. – p. 48-54.
  4. Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds / T.Sochacki, M. Amilusik, B. Lucznik, M. Fijalkowski, J.L. Weyher, B. Sadovyi, G. Kamler, G. Nowak, E. Litwin-Staszewska, A. Khachapuridze, I. Grzegory, R. Kucharski, M. Zajac, R. Doradzinski, M. Bockowski // Japanese Journal of Applied Physics. – 2014. – V.  – Art. No 05FA04.
  5. The challenge of decomposition and melting of gallium nitride under high pressure and high temperature / S.Porowski, B. Sadovyi, S. Gierlotka, S.J. Rzoska, I. Grzegory, I. Petrusha, V. Turkevich, D. Stratiichuk // Journal of Physics and Chemistry of Solids. – 2015. – V.  – p. 138-143.
  6. Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti mask / M.Amilusik, T. Sochacki, B. Lucznik, M. Bockowski, B. Sadovyi, A. Presz, I. Dziecielewski, I. Grzegory // Journal of Crystal Growth. – 2013. – V.  – p. 99-105.
  7. Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed-seed configuration / I. Grzegory, M. Bockowski, B. Lucznik, J. Weyher, E. Litwin-Staszewska, L. Konczewicz, Sadovyi, P. Nowakowski, S. Porowski // Journal of Crystal Growth. – 2012. – V. 350. – p. 50-55.
  8. HVPE-GaN growth on misoriented ammonothermal GaN seeds / T.Sochacki, M. Amilusik, B. Lucznik, M. Fijalkowski, J.L. Weyher, G. Nowak, B. Sadovyi, G. Kamler, R. Kucharski, M. Iwinska, I. Grzegory, M. Bockowski // Journal of Crystal Growth. – 2014. – V.  – p. 32-37.
  9. HVPE-GaN growth on ammonothermal GaN crystals / T.Sochacki, M. Amilusik, B. Lucznik, M. Bockowski, J.L. Weyher, G. Nowak, B. Sadovyi, G. Kamler, I. Grzegory, R. Kucharski, M. Zajac, R. Doradzinski, R. Dwilinski // Proceedings of SPIE – GALLIUM NITRIDE MATERIALS AND DEVICES VIII. – 2013. – V.  – Art. No 86250B.
  10. High nitrogen pressure solution growth of GaN in multi feed-seed configuration / M. Bockowski, B. Lucznik, T. Sochacki, Sadovyi, G. Nowak, E. Litwin-Staszewska, I. Grzegory // Physica Status Solidi (c). – 2012. – V. 9. – p. 453-456.
  11. Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange / J.L.Weyher, T.Sochacki, M. Amilusik, M. Fijalkowski, B. Lucznik, R. Jakiela, G. Staszczak, A. Nikolenko, V. Strelchuk, B. Sadovyi, M. Bockowski, I. Grzegory // Journal of Crystal Growth. – 2014. – V.  – p. 77-82.
  12. Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure / B.Sadovyi, A.Nikolenko, J.L. Weyher, I. Grzegory, I. Dziecielewski, M. Sarzynski, V. Strelchuk, B. Tsykaniuk, O. Belyaev, I. Petrusha, V. Turkevich, V. Kapustianyk, M. Albrecht, S. Porowski // Journal of Crystal Growth. – 2016. – V.  – p. 35-42.
  13. Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire / B.Tsykaniuk, A.Nikolenko, V.V. Strelchuk, V.M. Naseka, Y.I. Mazur, M.E. Ware, E.A. DeCuir, Jr., B. Sadovyi, J.L. Weyher, R. Jakiela, G.J. Salamo, A.E. Belyaev. // Nanoscale Research Letters. – 2017. – V.  – Art. No 397.
  14. Melting of tetrahedrally bonded semiconductors: “anomaly” of the phase diagram of GaN? / S.Porowski, B.Sadovyi, I. Karbovnyk, S. Gierlotka, S.J. Rzoska, I. Petrusha, D. Stratiichuk, V. Turkevich, I. Grzegory. // Journal of Crystal Growth. – 2019. – V.  – p. 5-9.
  15. First Step in Exploration of Fe–Ga–N System for Efficient Crystallization of GaN at High N2 Pressure / P. Sadovyi, Sadovyi, M. Bockowski, I. Dziecielewski, S. Porowski, I. Grzegory // Physica Status Solidi (a). – 2018. – V. 215. – Art. No 1700897.
  16. Influence of crystallization front direction on the Mg-related impurity centers incorporation in bulk GaN:Mg grown by HNPS method / B.Sadovyi, M.Amilusik, E. Litwin-Staszewska, M. Bockowski, I. Grzegory, S. Porowski, M. Fijalkowski, V. Rudyk, V. Tsybulskyi, M. Panasyuk, I. Karbovnyk, V. Kapustianyk // Optical Materials. – 2016. – V.  – p. 491-496.
  17. High temperature stability of electrical and optical properties of bulk GaN:Mg grown by HNPS method in different crystallographic directions / B.Sadovyi, M.Amilusik, G. Staszczak, M. Bockowski, I. Grzegory, S. Porowski, L. Konczewicz, V. Tsybulskyi, M. Panasyuk, V. Rudyk, I. Karbovnyk, V. Kapustianyk, E. Litwin-Staszewska, R. Piotrzkowski // Acta Physica Polonica A. – 2016. – V.  – p. A126-A128.
  18. Electroluminescence from n-ZnO microdisks/p-GaN heterostructure / B.Turko, A.Nikolenko, B. Sadovyi, L. Toporovska, M. Rudko, V. Kapustianyk, V. Strelchuk, M. Panasyuk, R. Serkiz, P. Demchenko // Optical and Quantum Electronics. – 2019. – V.  – Art. No 135.
  19. Physical properties of Ga-Fe-N system relevant for crystallization of GaN – Initial studies / B.Sadovyi, P.Sadovyi, I. Petrusha, I. Dziecielewski, S. Porowski, V. Turkevich, A. Nikolenko, B. Tsykaniuk, V. Strelchuk, I. Grzegory // Journal of Crystal Growth. – 2019. – V.  – p. 77-86.
  20. Effect of non-resonant polarized laser irradiation on the formation of nanostructured organic thin films / I.Karbovnyk, I.N.Kukhta, A. Lugovskii, M. Taoubi, B. Turko, B. Sadovyi, M. Sarzynski, A. Luchechko, H. Klym, A.V. Kukhta // Applied Nanoscience. – 2019. – V.  – p. 809-814.
  21. Formation of oriented luminescent organic thin films on modified polymer substrate / I.Karbovnyk, Sadovyi, B. Turko, M. Sarzynski, A. Luchechko, I. N. Kukhta, H. Klym, A. N. Lugovskii,·A. V. Kukhta // Applied Nanoscience. – 2019. – Published online.