DOI: https://doi.org/10.30970/jps.01.121
ELECTRONIC AND IONIC CONDUCTIVITY OF β-Ga2O3 SINGLE CRYSTALS
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Journal of Physical Studies 1(1), 121–125 (1996)
DOI: https://doi.org/10.30970/jps.01.121 ELECTRONIC AND IONIC CONDUCTIVITY OF β-Ga2O3 SINGLE CRYSTALS |
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V. Vasyltsiv, S. Londar, Yu. Kaminsky
Ivan Franko Lviv State University, Chair of Semiconductor Physics
50 Drahomanov Str., Lviv UA-290005, Ukraine
The Hall effect, Nernst E.m.f, current-voltage and capacity-voltage characteristics as well as the frequency dispersion of the dielectric constant of low resistivity gallium oxide single crystals were investigated. The crystals grown under reduced conditions are mixed ionic-electronic conductors. Nonlinear current-voltage characteristic and the dispersion of the dielectric constant are determined by a thin layer of high resistivity gallium oxide on the surface of low resistivity bulk single crystals.