DOI: https://doi.org/10.30970/jps.01.276
POTENTIAL BARIERS AT ORGANIC SEMICONDUCTOR INTERFACES
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Journal of Physical Studies 1(2), 276–278 (1997)
DOI: https://doi.org/10.30970/jps.01.276 POTENTIAL BARIERS AT ORGANIC SEMICONDUCTOR INTERFACES |
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B. Tsizh
Lviv Academy of Veterinary Medicine, 50 Pekars'ka Str., Lviv, UA-290010,
Ukraine
Potential barriers at interfaces of organic semiconductors (OS) belonging to linear polyacens and ftalocianins with the SnO$_2$ and CuJ transparent electrodes were studied. Spectral dependencies of thin film SnO$_2$/OS/CuJ sandwich structures photogalvanic properties at irradiation in turn from both sides were studied and their correlation with optical absorption coefficient spectra in the corresponding OS was analysed. It is shown that crystal and energetic structure of OS thin film depends essentially on the conditions of production and influences the interface properties.