DOI: https://doi.org/10.30970/jps.02.109
THE INFLUENCE OF GAMMA-QUANTA AND ELECTRON-BEAM IRRADIATION ON THE ELECTRIC FIELD DEPENDENCE OF CONDUCTIVITY AND OPTICAL ABSORPTION EDGE IN AMORPHOUS GeSe FILMS
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Journal of Physical Studies 2(1), 109–113 (1998)
DOI: https://doi.org/10.30970/jps.02.109 THE INFLUENCE OF GAMMA-QUANTA AND ELECTRON-BEAM IRRADIATION ON THE ELECTRIC FIELD DEPENDENCE OF CONDUCTIVITY AND OPTICAL ABSORPTION EDGE IN AMORPHOUS GeSe FILMS |
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I. Dutsyak
Ivan Franko Lviv State University, Chair of X-Ray Metal Physics
8 Kyrylo i Mefodii Str., Lviv, UA-290005, Ukraine
The influence of gamma and electron irradiation (at the doses of $D\le 10^6$ Gy and $K \le 4.5 \cdot 10^{-6}$ C$\cdot {\rm cm}^{-2}$ respectively) on the electric field dependence of conductivity and fundamental absorption edge in amorphous GeSe films obtained by means of the technique of flash evaporation at $T_s$=293 K has been investigated. The differences in the shape of the field dependence of conductivity after irradiation are discussed in terms of the conductivity model with takes into account the Pool–Frenkel effect with charge defect centres and hopping contribution from charge transport via localized states at the band edges. Optical absorption measurements showed that the fundamental absorption edge is a function of both irradiation kinds and its doses. After gamma irradiation the optical gap decreased and the width of the band tails increased. The electron irradiation leads to a decrease of the band tails and the optical gap is unchanged.