DOI: https://doi.org/10.30970/jps.02.76
CLUSTER INHOMOGENEITIES PHOTOCONDUCTIVITY IN NARROW-BAND SEMICONDUCTORS
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Journal of Physical Studies 2(1), 76–78 (1998)
DOI: https://doi.org/10.30970/jps.02.76 CLUSTER INHOMOGENEITIES PHOTOCONDUCTIVITY IN NARROW-BAND SEMICONDUCTORS |
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I. S. Virt
Ivan Franko Pedagogical Institute
24 Franko Str., Drogobych, UA–293720, Ukraine
It is shown that under the lighting of a semiconductor ternary compound with the narrow band–gap ($hν\leq E_g$) the photoresponce is possible and conditioned by the electron–hole pairs generation occuring on the space cluster ingomogeneities with local $E_{gs}\leq E_g$ due to the composition $x$ fluctuations. The space distribution of nonequilibrium charge carriers in the cristallites bulk is determined. The dependence of their concentration value on cluster sizes is also calculated.