DOI: https://doi.org/10.30970/jps.02.79
CADMIUM MECHANOEMISSION FROM DOPED CADMIUM TELLURIDE CRYSTALS
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Journal of Physical Studies 2(1), 79–80 (1998)
DOI: https://doi.org/10.30970/jps.02.79 CADMIUM MECHANOEMISSION FROM DOPED CADMIUM TELLURIDE CRYSTALS |
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B. Pavlyk
Lviv State University, Chair of Semiconductor Physics
50 Drahomanov Str., Lviv, UA-290005, Ukraine
The regularities of cadmium atoms emission from CdTe monocrystal surfaces which was stimulated by uniaxial squeezing at steady temperature were studied. It was found that the sample deformations at 550 K cause an increase in the Cd emission intensity. A sharp increase of atomic cadmium signal is observed at the initial stage of the CdTe crystal squeezing. This is caused by a motion in the direction to the prior existing surface dislocations at which nonstoichiometric cadmium is localized. The Se, Cl doping of the CdTe crystals causes the dislocation concentration decrease and also the Cd deposition intensity decrease as compared with the nominally purified crystals. The obtained experimental results are explained in terms of the dislocation masstransfer mechanism.