Journal of Physical Studies 2(2), 205–212 (1998) DOI: https://doi.org/10.30970/jps.02.205 ION-BEAM-INDUCED CRYSTALLIZATION AND AMORPHIZATION IN Zn+-IMPLANTED SILICON

M. Kalitzova^a, R. A. Yankov^a,1, S. Simov^a, Ch. Angelov^b, G. Vitali^c, C. Pizzuto^c, G. Zollo^c, D. Manno^d, J. Fauré^e, L. Kilian^e, P. Bonhomme^e
aG. Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, BG–1784 Sofia, Bulgaria,
^bInstitute of Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, BG–1784 Sofia, Bulgaria,
^cDipartimento di Energetica, Universitá di Roma ‟La Sapienza”, and INFM, Via A. Scarpa 14–00161 Roma, Italy,
^dDipartimento di Scienza dei Materiali and INFM, Universitá di Lecce, Via Arnesano, 73100 Lecce, Italy,
^eLaboratoire de Microscopie Electronique, Université de Reims, INSERM U314 UFR Sciences,
21 Rue Clement Ader, 51100 Reims Cedex, France,
^a< Markaliz@bgearn.acad.bg >

The microstructural changes which occur during high–dose Zn$^+$– irradiation of (100) silicon have been studied. The implantations have been carried out at the energy of 50 keV using a beam current density of 10$μ$A cm$^{-2}$ and ion doses in the range of 1$\times$10$^{15}$ to 1$\times$10$^{18}$cm$^{-2}$. Cross–sectional transmission electron microscopy in diffraction contrast and phase contrast modes has been employed in conjunction with other analytical techniques and computer simulations. The kinetics of the ion beam induced crystallization process has been examined as a function of implantation dose. A specific crystalline overlap has been observed in the near surface region influenced by the implantation, and this has been interpreted as formation of superlattices where Zn alternates Si along (111) direction. The experimental results have been discussed in terms of microscopic beam heating effects and the concept of critical dose ranges.

¹Present address: Institute of Ion Beam Physics and Materials Research, Research Centre Rossendorf, POB 510119, D–01314 Dresden, Germany

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