Journal of Physical Studies 3(4), 498–501 (1999) DOI: https://doi.org/10.30970/jps.03.498 THE INFLUENCE OF INTRINSIC DEFECTS ON ELECTROPHYSICAL PROPERTIES OF GALLIUM NITRIDE FILMS

V. Bondar, V. Vasylziv, I. Kucharsky, B. Simkiv
Ivan Franko National University of Lviv, Physical Department
50 Drahomanov Str., Lviv, UA-79005, Ukraine

Electro– and photoconductivity of gallium nitride films deposited by rf magnetron sputtering in dependence on substrate temperature and nitrogen partial pressure were investigated. It was found that the increasing of substrate temperature or decreasing of nitrogen partial pressure during deposition is accompanied by a rise in conductivity. The evaluated energy of the formation of defects responsible for donor centers creation equals to 2.3~eV. It was found that the most probable donors in the GaN thin films are nitrogen vacancies.

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