DOI: https://doi.org/10.30970/jps.04.78
THE ACTION OF XeCl*-LASER RADIATION ON TEMPERATURE DEPENDENCE OF POROUS SILICON LUMINESCENCE INTEGRAL INTENSITY
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Journal of Physical Studies 4(1), 78–81 (2000)
DOI: https://doi.org/10.30970/jps.04.78 THE ACTION OF XeCl*-LASER RADIATION ON TEMPERATURE DEPENDENCE OF POROUS SILICON LUMINESCENCE INTEGRAL INTENSITY |
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S. M. Baschenko, I. V. Blonskyy, Yu. O. Skryshevskyy
Institute of Physics of the National Academy of
Sciences of Ukraine
46 Nauky Pr., Kyiv, UA-03039, Ukraine
For the first time a possibility to influence on the shape of temperature dependence of integral intensity of luminescence $I_{\rm lum}(T)$ in the region of orange–red luminescence band for the por–Si samples by UV–irradiation has been demonstrated. In the type 1 samples two spectral components have been elucidated, each differently reacting on the UV–irradiation phase and on the temperature change. It is concluded that different shapes of the $I_{\rm lum}(T)$ dependence previously observed on various samples by a varying groups of investigators is stipulated by different active contribution into the resulting shape of the short–wavelength (L) and long–wavelength (M) luminescence bands and, possibly, other emission bands. The nature of the UV irradiation influence on the $I_{\rm lum}(T)$ dependencies is analysed.