Journal of Physical Studies 4(1), 82–84 (2000)
DOI: https://doi.org/10.30970/jps.04.82

THE STRUCTURE AND PHYSICAL PROPERTIES OF InSe AND GaSe SELECTIVELY INTERCALATED WITH LITHIUM

I. I. Grygortchak, S. V. Gavrylyuk, V. V. Netyaga, Z. D. Kovalyuk
Chernivtsi Branch of the IPM NAS of Ukraine
5 I. Vilde Str., Chernivtsi, UA-58001, Ukraine

The intercalation process of indium and gallium monoselenides with ${\rm Li}^+$ ions from a 24\% solution of $n$–butyllithium in hexane is investigated. From the ‟in–situ" measurements of conductivity across the layers it is concluded that along with the donor properties of the ‟guest" component the variation of the energetic topology of impurity levels as well as scattering processes should be taken into account. The impedance frequency dependences in the range from 10$^{-2}$ to 10$^6$~Hz point to a hopping conductivity along the $C$ axis. The calculated values of the hopping distance, the density of states at the Fermi level, and the spread of trap centres are 220~\AA; $1.6\cdot10^{17} {\rm eV}^{-1}$, and $0.28 {\rm eV}$, respectively. The observed increases of the lattice parameter ıt c} are 0.054 and 0.081\ {\rm\AA}\quad for GaSe and InSe crystals, respectively.

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