DOI: https://doi.org/10.30970/jps.04.165
DEPENDENCE OF ELECTRON SPECTRUM OF THE ZnSe/GaAs STRAINED HETEROSTUCTURE ON THE DISTANCE BETWEEN MISFIT DISLOCATIONS
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Journal of Physical Studies 4(2), 165–168 (2000)
DOI: https://doi.org/10.30970/jps.04.165 DEPENDENCE OF ELECTRON SPECTRUM OF THE ZnSe/GaAs STRAINED HETEROSTUCTURE ON THE DISTANCE BETWEEN MISFIT DISLOCATIONS |
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R. M. Peleshchak1, B. A. Lukiyanets2, V. P. Tupychak1
1Ivan Franko Drohobych State Pedagogical University,
24
I. Franko Str., Drogobych, UA-82100, Lviv Region, Ukraine
2State University ‟Lvivska Polytechnica", Department of
Physics,
12 Bandery Str., Lviv, UA-79013, Ukraine
In the framework of deformation potential model the dependence of average deformation potential induced by the dislocation wall on the inter-dislocation distance $d$ is obtained. It is shown that in the heterostructure with misfit dislocation the electron energy of ground state non-monotonously depends on $d$.
PACS number(s): 73.20.At, 73.20.Dx.