Journal of Physical Studies 4(2), 208–215 (2000)
DOI: https://doi.org/10.30970/jps.04.208

SOME PECULIARITIES OF THE RECONSTRUCTION OF DEEP TRAPS DISTRIBUTIONS VIA THE INJECTING SPECTROSCOPY METHOD

А. S. Opanasyuk, I. Yu. Protsenko, N. V. Tirkusova

Sumy State University,
2 Rymskyi-Korsakov Str., Sumy, UA-40007, Ukraine

The analyzed in this paper method of the deep states injecting spectroscopy of semiconducting materials enables one to obtain the information about the trap parameters directly via space-charge-limited current-voltage characteristics. The suggested methodology is based on Fredholm equation of the first order and can be realized at the room temperature. The method of computer modelling clarifies the effect of temperature and some other parameters on the correctness of the results got after the reconstruction of deep trap distribution. The method validity on energy variety is verified. The calculations prove the method to be highly informative and precise.

PACS number(s): 84.37.+g, 87.64.Lg, 07.05.Tp.

ps pdf