Journal of Physical Studies 4(3), 318–320 (2000) DOI: https://doi.org/10.30970/jps.04.318 THE EFFECT OF ISOVALENT IMPURITY OF GERMANIUM ON PIEZORESISTANCE OF SILICON A. V. Fedosov, M. V. Khwishchun, L. V. Jashchynskij The State Technical University of Lutsck, 75 Lvivs'ka Str., Lutsk, UA-43000, Ukraine

Isovalent impurity atoms of germanium are electrically passive regions in the Si-crystals and for this reason their influence upon optical and electrical properties of germanium is determined by the presence of the internal deformation fields which arise as a result of discrepancy of covalent atom radii of germanium $(R_{\rm Ge}=1.22$ Å) and silicon $(R_{\rm Si}=1.17$ Å). The existance of internal stresses in crystals with isovalent impurity determines the actuality of researching their influence upon the kinetic effects, since the energy state of electrically passive region is changing in deformed crystal under the action of elastic strain field. The present paper is devoted to study the effect of the above mentioned fields of internal stress on piezoresistancs of $n$-Si-crystals.

PACS number(s): 72.20.-i, 73.20.Hb

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