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Journal of Physical Studies 5(1), 43–45 (2001)
DOI: https://doi.org/10.30970/jps.05.43 THE NATURE OF NOISES IN LAYERED MONOCRYSTALS AND FILMS OF InSeZ. D. Kovalyuk, V. B. Orletskii, I. M. Budzulyak, V. V. Netyaga
Chernivtsi Branch of the IPM NAS of the Ukraine |
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The nature of noise and its value were investigated for photosensitive InSe monocrystals of $p$- and $n$-type conductivity as well as for the InSe films received by the method of laser evaporation. It has been established that for the homogeneous monocrystals and films of InSe the noise of the type $f^{-γ}$ is prevailing. At the current through a sample equal to $(3\div6)\cdot 10^{-6}$ A, the exponent is 0.87-1.0 for single crystal samples. For films of InSe we have $γ=0.85$ (at the current of the order of $10^{-6}$ A). It has been shown that experimental dependences of noise spectral density on a bias value have the form $S(f)= {\rm const}\cdot U^n$, where $U$ is the value of the bias. In our case $n= 0.8\div1.5$, whereas for the majority of semiconductors $n=2$ (the Hooge relation). We have determined a spectral density of power at the frequency 1200 Hz and $Δ f= 150$ Hz which is equal to $10^{-14}\div10^{-15}$ s.
PACS number(s): 72.40.+w, 72.70.+m