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Journal of Physical Studies 6(1), 83–85 (2002)
DOI: https://doi.org/10.30970/jps.06.83 INFLUENCE OF THE POTENTIAL FLUCTUATIONS ON THE CONDUCTION OF In2Te3 AND Hg3In2Te6 COMPOUNDSP. M. Gorley, O. G. Grushka, Z. M. Grushka
Yuriy Fedkovych Chernivtsi National University, Chair of Physical Electronics |
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Current-voltage characteristics (I-V) of the In$_2$Te$_3$ and Hg$_3$In$_2$Te$_6$ compounds under warming electric field in dependence on doping have been investigated. It is shown that I-V are caused by two mechanisms: carrier heating and decrease of conductivity activation energy while percolation level is also decreasing. Characteristic space and energy sizes of random potential, which modulates the bottom of conduction band and their dependence on the doping impurity type were estimated.
PACS number(s): 72.20.Ht