Journal of Physical Studies 7(3), 318–323 (2003) DOI: https://doi.org/10.30970/jps.07.318 ELECTRICONDUCTIVITY AND HALL COEFFICIENT OF LAYERED CRYSTALS In4Se3 V. P. Savchyn1, J. M. Stakhira1, T. M. Demkiv2, L. S. Demkiv1 1Ivan Franko National University of Lviv, Department for Semiconductor Physics 50 Dragomanov Str., Lviv, UA–79005, Ukraine e-mail: savchyn@wups.lviv.ua 2Stepan Gzhytsky Lviv State Akademy of Veterinary Medicine 50 Pekarska Str., Lviv, UA–79010, Ukraine

A theoretically calculated temperature dependences of Fermi level, electriconductivity and Hall coefficient for the layered crystal In$_{4}$Se$_{3}$ depending upon the of concentration donor and acceptor impurities. There are established conditions of occurrence of repeated inversions of the Hall coefficient. It is shown that in In$_{4}$Se$_{3}$ crystals localized states of the various nature coexist: the localized states are connected with the presence of impurity and defects, and the localized states caused by a dynamic disorder of the crystal.

PACS number(s): 72.20, 71.55.Ht

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