DOI: https://doi.org/10.30970/jps.07.413
PARAMAGNETIC DEFECTS IN SILICON STRUCTURES WITH NANOCRYSTALLITES
V. Ya. Bratus'
Institute of Semiconductor Physics NASU,
45 Nauky Pr., Kyiv, 03028, Ukraine
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Journal of Physical Studies 7(4), 413–418 (2003)
DOI: https://doi.org/10.30970/jps.07.413 PARAMAGNETIC DEFECTS IN SILICON STRUCTURES WITH NANOCRYSTALLITESV. Ya. Bratus'
Institute of Semiconductor Physics NASU, |
|
A brief review of original electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) studies on some silicon-based structures with nanocrystallites is presented. The ıt P}$_b$ center in high-temperature annealed porous silicon has been investigated with ENDOR. High sensetivity of the ENDOR technique to hydrogen presence has been found. In Si-, Ge- and C-implanted layers of SiO$_2$ and spark-processed silicon the distinct silicon- and oxygen-vacancy associated defects have been identified with EPR. The origin of the defects in spark-prosecced Si is discussed in detail. The resumblence and distinction of the defects in silicon-based matrices with nanocrystallites illustrate a variety of structural transformations there. The role of paramagnetic defects in photoluminescence is briefly discussed.
PACS number(s): 61.46.+w, 68.35.Dv, 76.30.Mi, 76.70.Dx