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Journal of Physical Studies 7(4), 456–460 (2003)
DOI: https://doi.org/10.30970/jps.07.456 COMPONENT INTERMIXING AND STRAIN EFFECTS IN CdSe/ZnSe QUANTUM DOTSV. V. Strelchuk{1}, M. Ya. Valakh{1}, E. F. Venger{1}, Yu. G. Sadofyev{2}, N. O. Korsunska{1}, G. N. Semenova{1}, L. V. Borkovska{1}, M. V. Vuychik{1}
{1}Institute of Semiconductor Physics NASU, Kyiv, 03028, Ukraine |
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The CdSe/ZnSe structures with quantum dots (QD) were investigated using the photoluminescence and Raman scattering at the resonant band-to-band excitation of ZnSe. The presence of mechanical strain in ZnSe barrier layers and formation of density of states tails for multistacks was shown. The experimentally observed inhomogenous broadening of the emission band of quantum dots maintains the existence of fluctuations of the composition. Is has been shown that the change of QD's composition is a factor that determines the shift of Raman peak at the variation of energy excitation within the emission band of QD's. The strain in multistack structures is inhomogenous over its thickness and the strain relaxation in top layers of the structure may be due to increase in the number of layers.
PACS number(s): 78.55.Et, 78.66.Hf, 68.66.Hb, 78.30.Fs