Journal of Physical Studies 8(1), 47–54 (2004) DOI: https://doi.org/10.30970/jps.08.47 THERMODYNAMICS OF GaSe OXIDATION IN THE GAS LATTICE MODEL N. K. Tovstyuk Department for Semiconductor Physics, Faculty of Electronics, Ivan Franko National University of Lviv, 50 Drahomanov St., Lviv, UA-79005, Ukraine

The thermodynamics of GaSe oxidation in the gas lattice model as a result of the alternating occupation of sites or intersites by atoms of selenium or oxygen is studied. Sharp redistribution of selenium and oxygen atoms depending on their chemical potentials, selenium chemical potential, and average occupation number of selenium is obtained. It is shown that at low temperatures selenium dominates while at higher temperatures it is replaced by oxygen.

PACS number(s): 05.70.-a, 68.35Dv, 68.47.Gh

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