DOI: https://doi.org/10.30970/jps.08.173
DETERMINATION OF STRUCTURE PARAMETERS OF POROUS SILICON BY THE PHOTOELECTRIC METHOD
D. F. Timokhov, F. P. Timokhov
Odessa National University, 2 Dvoryanska Str., Odessa, UA-65026, Ukraine
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Journal of Physical Studies 8(2), 173–177 (2004)
DOI: https://doi.org/10.30970/jps.08.173 DETERMINATION OF STRUCTURE PARAMETERS OF POROUS SILICON BY THE PHOTOELECTRIC METHODD. F. Timokhov, F. P. Timokhov Odessa National University, 2 Dvoryanska Str., Odessa, UA-65026, Ukraine |
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Electrical and photoelectrical properties of Al/porous silicon/ monocrystalline silicon sandwich-structures (Al/PS-(c-Si)) based on nanostructured porous silicon, obtained by electrochemical anodization of monocrystalline silicon wafers are reported. The photosensitivity of Al/PS-(c-Si) structures is determined by PS layer photoconduction. The photoelectrical method of definition of effective band gap in the vicinity of PS-(c-Si) heterojunction is proposed. The opportunity of definition of the effective diameter of quantum wires is shown. Diffusion length of the minority charge carriers in porous silicon is determined by the method of reverse photocurrent.
PACS number(s): 72.80.Cw; 72.80.Ng; 72.40.+w; 73.40.Gk