DOI: https://doi.org/10.30970/jps.09.248
A STUDY OF ELECTROPHYSICAL PROPERTIES OF HgCdMnZnTe MONOCRYSTALS
I. M. Gorbatyk, V. V. Zhiharevich, S. E. Ostapov
Chernivtsi National University,
2 Kotsyubinskiy St., Chernivtsi, UA-58012, Ukraine
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Journal of Physical Studies 9(3), 248–252 (2005)
DOI: https://doi.org/10.30970/jps.09.248 A STUDY OF ELECTROPHYSICAL PROPERTIES OF HgCdMnZnTe MONOCRYSTALSI. M. Gorbatyk, V. V. Zhiharevich, S. E. Ostapov
Chernivtsi National University, |
|
This paper presents a study of the temperature dependencies for conductivity, Hall coefficient and mobility in monocrystals of the new semiconductor solid solution HgCdMnZnTe of various composition. We revealed the peculiarity of scattering on ionized impurities and polar optical phonons and defined the energy gap (using optical and galvanomagnetic study) and also gave the estimation of concentration and activation energy of acceptor impurity. It is shown that the influence of light holes is negligible in simulation procedure of scattering processes in the crystals of this type.
PACS number(s): 72.15.-v; 72.15.Qm; 72.20.My; 72.80.Ey