Journal of Physical Studies 9(3), 261–264 (2005)
DOI: https://doi.org/10.30970/jps.09.261

PHOTOELECTRIC PROPERTIES OF THE LEAD TUNGSTATE CRYSTALS WITH DIFFERENT STRUCTURAL PERFECTION

A. Voloshinovskii^{1}, A. Vaskiv^{1}, R. Gamernyk^{1}, I. Garapyn^{1}, A. Krochuk^{1}, I. Solskii^{2}, Z. Khapko^{1}
^{1}Faculty of Physics, Ivan Franko National University of Lviv, 8 Kyryla i Mefodija St., 79005, Lviv, Ukraine,
^{2} Institute for Materials, SCR ‟Carat”, 202 Stryjska Str., 79031 Lviv, Ukraine

At room temperature photoconductivity measurements were performed for PbWO$_{4}$ crystals grown in varied technological conditions. In the near band-edge region three bands of photo-ionization absorption (310 nm, 330 nm and 338 nm) are detected. The intensity of these bands depends on a crystal perfection and quality. The value of a photocurrent under the excitation within the 330 nm band depends on preceding irradiation of a PbWO$_{4}$ crystal by the laser beam ($λ _{ex}$ = 337 nm). The nature of defect centers related to the photo-ionization absorption bands is discussed.

PACS number(s): 78.55.-m; 78.55.Hx