Journal of Physical Studies 9(4), 319–324 (2005)
DOI: https://doi.org/10.30970/jps.09.319

THE EFFECT OF HIGH-TEMPERATURE TREATMENT ON THE STRUCTURAL AND MAGNETIC CHANGES IN SILICON CRYSTALS

N. N. Novikov¹, B. D. Patsay¹, V. M. Tsmots², P. G. Litovchenko³, Yu. V. Pavlovskii^{2,3}, M. M. Luchkevych^{2,3}
¹Taras Shevchenko National University of Kyiv , Kyiv, Ukraine
pacaj@ukr.net
²Solid State Microelectronics Laboratory of the Academy of Sciences of Ukraine,
24, Franko St., Drohobych, 82100, Ukraine,
tsmots@drohobych.net
³Institute of Nuclear Researches, NASU, pr. Nauky, 47, Kyiv, Ukraine

The amount of impurity-structural complexes in silicon crystals is studied using three-crystal diffractometry. A method for calculating the radius and concentration of clusters and dislocation loops is proposed. The X-ray scattering and magnetic characteristics of ıt Cz}-Si crystals treated by high-temperature annealing (HTA) at 650-1100$^\circ$С and re-annealing at $1150^\circ$С is studied. The distribution of defects created as a results of HTA is investigated. The results obtained are compared with the data available in the relevant literature. The experimental dependencies of integral intensity, half-width of diffusion peak, and height of main peak on the rotation angle of the sample are demonstrated. It is established that HTA results in the system of interconnected paramagnetic centers which is the best reveal at the annealing temperature nearby $900^\circ$С.

PACS number(s): 07.85.Nc, 61.72.Dd