Journal of Physical Studies 10(1), 46–53 (2006) DOI: https://doi.org/10.30970/jps.10.46 CONDUCTION MECHANISMS IN INTERMETALLIC n-ZrNiSn SEMICONDUCTORS HEAVILY DOPED WITH ACCEPTOR Co IMPURITIES O. I. Bodak{1}, V. A. Romaka{2,3}, M. G. Shelyapina{4}, Yu. K. Gorelenko{1}, Yu. V. Stadnyk{1}, L. P. Romaka{1}, D. Fruchart{5}, V. F. Chekurin{3} {1}Ivan Franko National University of Lviv, 6 Kyryla i Mefodija St., UA-79005, Lviv, Ukraine, e-mail: gorelenko{\_}yuriy@franko.lviv.ua {2}National University ‟Lvivska Politechnika”, 12 Bandera St., UA-79013 Lviv, Ukraine, e-mail: vromaka@polynet.lviv.ua {3}Ya. Pidstryhach Institute of Applied Problems of Mechanics and Mathematics National Academy of Scieces of Ukraine, 3-b Naukova St., UA-79060 Lviv, {4}V. А. Fock Institute of Physics, St. Petersburg State University, 1 Ulyanovskaya St., Petrodvorets, RU-198504, St.-Petersburg, Russia, e-mail: marinashelyapinna@mail.ru {5}Laboratoire de Cristallographie, CNRS, BP 166, 38042 Grenoble Cedex 9, France, e-mail: daniel.fruchart@grenoble.cnrs.fr

The influence of a high concentration of the acceptor impurities Co ($N_{A}$ of about 10$^{20}$ cc$^{-1})$ on the electronic structure, the Fermi level location, electroconductivity, the Seebeck coefficient and magnetic susceptibility in the $n$-ZrNiSn intermetallic semiconductor were investigated. The importance of both the donor impurity and the acceptor impurity bands in the heavily doped $n$-ZrNiSn conduction were determined. The transition of the conduction from the activated- to a metallic-like type while the acceptor impurities concentration is changing, was observed.

PACS number(s): 71.20.Nr; 72.20.Pa; 72.80.Ga; 75.20.Ck; 81.05.Hd

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