Journal of Physical Studies 11(2), 190–194 (2007) DOI: https://doi.org/10.30970/jps.11.190 METAL–NONMETAL TRANSITION IN SEMICONDUCTOR MELTS WITH 3d METAL ADMIXTURES V. Sklyarchuk, Yu. Plevachuk, S. Mudry, I. Shtablavyi Department for Metal Physics, Ivan Franko National University of Lviv 8 Kyryla i Mephodija St., Lviv, UA–79005, Ukraine tel: +38 032 2394270, fax: +38 032 2970143, e-mail: plevachuk@mail.lviv.ua

Electrical conductivity and thermoelectric power measurements were performed for liquid semiconductor alloys Se$_{0.5}$Te$_{0.5}$ doped with $3d$ metals in a wide temperature range (up to 1600 K) under ambient pressures of argon gas (up to 35 MPa). The structural changes were studied by means of the X-ray diffraction method. The structure factors are analyzed. The $3d$ metal admixtures increase the electrical conductivity, decrease the thermoelectric power and affect the temperature of the semiconductor-metal transition. The results are interpreted in the frame of the model describing a mechanism of the electron spectrum evolution in liquid semiconductors, which takes into account the charge resonance scattering on the virtual bound states, occurring due to the $3d$ admixture metal states in the semiconductor matrix.

PACS number(s): 64.70.-p, 71.22.+i

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