DOI: https://doi.org/10.30970/jps.11.294
COHERENT TUNNELING IN A SEMICONDUCTOR SYSTEM: DOUBLE BARRIER RESONANT-TUNNELING STRUCTURE BUILT IN THE SCHOTTKY BARRIER
S. D. Lin{1}, C. P. Lee{1}, V. V. Ilchenko{2}, D. I. Sheka{2}, O. V. Tretyak{2}, A. M. Korol{3}, I. V. Nosenko{3}
{1}Department of Electronics Engineering, National Chiao-Tung
University,
1001 Ta Hsueh Road, Hsinchu, Taiwan, Republic of
China
{2}Faculty of Radiophysics, Taras Shevchenko National University of Kyiv,
64, Volodymyrska St., Kyiv, Ukraine
{3}Department of Physics, National University for Food
Technologies,
68, Volodymyrska St., Kyiv, Ukraine
