Journal of Physical Studies 11(3), 294–297 (2007)
DOI: https://doi.org/10.30970/jps.11.294 COHERENT TUNNELING IN A SEMICONDUCTOR SYSTEM: DOUBLE BARRIER RESONANT-TUNNELING STRUCTURE BUILT IN THE SCHOTTKY BARRIERS. D. Lin{1}, C. P. Lee{1}, V. V. Ilchenko{2}, D. I. Sheka{2}, O. V. Tretyak{2}, A. M. Korol{3}, I. V. Nosenko{3}
{1}Department of Electronics Engineering, National Chiao-Tung
University, |
Resonant-tunneling processesing electrons in a system consisting of the double-barrier resonant-tunneling structure built in the Schottky barrier are studied. It is shown that the coherent tunneling can take place in this system; both the transmission rates of electrons and the current-voltage characteristic are evaluated and analyzed for such a case. The theoretical results agree perfectly well with the data obtained from the especially performed experiment.
PACS number(s): 73.40.Gk