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Journal of Physical Studies 12(1), Article 1801 [7 pages] (2008)
DOI: https://doi.org/10.30970/jps.12.1801 MODELLING OF THE FREQUENCY DEPENDENCE OF CAPACITANCE--VOLTAGE CHARACTERISTICS OF METAL--SEMICONDUCTOR CONTACT WITH QUANTUM DOT LAYERV. V. Ilchenko, K. Y. Panarin, A. A. Buyanin, V. V. Marin, N. V. Shkil, O. V. Tretyak
Radiophysics faculty, Taras Shevchenko National
University of Kyiv, |
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The modelling of the capacitance-voltage characteristics of the metal-semiconductor contact with quantum dot layer located in the space charge region has been carried out. The analytical solution for the capacitance-voltage dependence allows to clearly describe their certain part with negative differential capacitance. It was shown that this effect can be observed or disappear depending on testing signal frequency on which the measuring is done. It was displayed that this effect is kinetic by its nature and it can be formed depending on the rate of changing quantum dots charge state on different frequency measuring.
PACS number(s): 85.35.Be, 73.22.-f