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Journal of Physical Studies 12(2), Article 2601 [8 pages] (2008)
DOI: https://doi.org/10.30970/jps.12.2601 POLARON STATES OF AN ELECTRON IN A DOUBLE NANOSCALE HETEROSTRUCTURE OF HEXAGONAL SYMMETRY CRYSTALS (ON THE BASIS OF AlN/GaN/AlN)V. I. Boichuk, V. A. Borusevych, I. V. Bilynsky
Ivan Franko Drohobych State Pedagogical University, |
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We have studied theoretically a polaron dispersion law in the
GaN crystal and AlN/GaN/AlN double nanoscale
heterostructure. Every type of polarization oscillation an
electron interacts with is taken into account. Calculations are
performed in the framework of infinite and finite band-gap models.
We show that with the nanofilm thickness increase interface phonon
contribution in the polaron energy decreases, while that of
confined phonons gains in value. We present calculation results of
a polaron dispersion law in the region $k