DOI: https://doi.org/10.30970/jps.12.4602
POLARON BINDING ENERGY IN HgS/CdS NANOFILMS
V. M. Kramar
Chernivtsi National University,
2, Kotsyubynsky St., Chernivtsi, UA--58012, Ukraine
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Journal of Physical Studies 12(4), Article 4602 [6 pages] (2008)
DOI: https://doi.org/10.30970/jps.12.4602 POLARON BINDING ENERGY IN HgS/CdS NANOFILMSV. M. Kramar
Chernivtsi National University, |
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An electron-phonon interaction influence on the bottom of ground energy band of electron in a finite quantum well was investigated by using the dielectric continuum approach and the Green's function method. Polaron binding energy as a film-thickness function was calculated for the flat nanofilm of semiconductor crystal $β$-HgS situated in a semiconductor medium $β$-CdS. It is shown that with the exception of very thin nanofilms the interaction of electrons with confined phonons through the bands of the whole discrete part of energy spectrum is important.
PACS number(s): 63.20.Kr, 79.60.Jv