Journal of Physical Studies 12(4), Article 4701 [4 pages] (2008) DOI: https://doi.org/10.30970/jps.12.4701 OPTIMIZATION OF HETEROJUNCTION SOLAR CELL n-GaAs/p-AlxGa1-xAs P. P. Horley1, O. A. Chervinsky1, Yu. V. Vorobiev2, J. Gonzalez-Hernandez3 1Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky Str., 58012 Chernivtsi, Ukraine 2 CINVESTAV Unidad Queretaro, Libramiento Norponiente 2000,76230 Queretaro, Mexico 3CIMAV, Miguel de Cervantes 120, 31109 Chihuahua, Mexico

The paper presents some results of numerical studies concerning carrier transport processes in the heterojunction solar cell $n$-GaAs/$p$-Al$_x$Ga$_{1-x}$As. The authors optimized photovoltaic efficiency of the modeled device as a function of aluminum molar content $x$, window layer thickness, type and concentration of the doping impurity, which allowed to determine the ranges of control parameters required to ensure photovoltaic efficiency of $20.2 \div 20.8\%$ under normal conditions for the cell without special surface modifications.

PACS number(s): 71.15.-m, 72.40.+w, 73.20.Hb

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