Journal of Physical Studies 13(2), Article 2301 [5 pages] (2009)
DOI: https://doi.org/10.30970/jps.13.2301

NEAR-THRESHOLD EXCITATION OF THE RESONANCE λ 158.6 nm LINE IN ELECTRON-INDIUM ION COLLISIONS

A. N. Gomonai, A. I. Imre, E. V. Ovcharenko, Yu. I. Hutych

Institute of Electron Physics, National Academy of Sciences of Ukraine,
21, Universitetska St.,Uzhgorod, UA--88017, Ukraine

Near-threshold electron-impact excitation of the resonance In$^{+}$ ion $5s5p\,{ }^1P_1^o \to 5s^2\,{ }^1S_0 $ ($λ =158.6$ nm) line is studied using a spectroscopic method and a crossed (at right angle) monoenergetic electron and ion beams technique. Strong resonance features observed in the energy dependence of the effective excitation cross-section for this line are due to the emission of the dielectronic satellites $4d^{10}5s5p({ }^1P_1^o )np\to 4d^{10}5s^2np$ of the resonance line below threshold and resonance excitation due to the electron decay of the autoionizing states above threshold. At the threshold of the resonance line excitation the radiative decay of the autoionizing states affects significantly both the shape and the value of the effective excitation cross-section.

PACS number(s): 34.80.Kw

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