Journal of Physical Studies 15(2), Article 2705 [4 pages] (2011) DOI: https://doi.org/10.30970/jps.15.2705 DETERMINING THE DEFORMATION POTENTIAL CONSTANT Ξd IN n-Si BY THE METHOD OF PIEZORESISTANCE S. V. Luniov1, S. A. Fedosov2 1Lutsk National Technical University, Physics Departament, 75 L'vivska Avenue, Lutsk, UA--43018, Ukraine 2Lesia Ukrainka Volyn National University, Solid-State Physics Departament, 13 Voli Avenue, Lutsk, UA--43000, Ukraine

On the basis of the longitudinal piezoresistance in the case of $X//J//[100]$ and the theory of anisotropic scattering a constant of the deformation potential $Ξ _{d} $ in $n$-Si is defined. It is shown that while determining the parameter of anisotropy of the relaxation times for $n$-Si with the deep energetic level $E_{c} -0.17$\,eV it is necessary to take into account the dependence of concentration of ionized deep centers on deformation.

PACS number(s): 72.20.Fr

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