Journal of Physical Studies 15(4), Article 4701 [2 pages] (2011) DOI: https://doi.org/10.30970/jps.15.4701 PHOTOELECTRIC PROPERTIES OF SELF OXIDE/Cd1–xMnxTe HETEROSTRUCTURES G. Ilchuk1, R. Petrus'1, V. Kusnesh1, I. Kogut2, Yu. Rud'3 1Lviv Polytechnic National University, 79013, L'viv, Ukraine, petrusrom@gmail.com 2Vasyl Stefanyk Precarpathian National University, 76018, Ivano-Frankivsk, Ukraine 3Ioffe Physicotechnical Institute, Russia Academy of Sciences, 194021 St. Petersburg, Russia

The new technology of energy barrier fabrication by thermal treatment of Cd$_{1-x}$Mn$_x$Te solid solution crystal wafers was proposed. By the first time the self oxide/Cd$_{1-x}$Mn$_e$Te ($x=0.00-0.70$) heterostructures with rectifying and photosensitive properties was fabricated. The relative quantum efficiency of photoconversion of fabricated by the firs time heterostructures was investigated. The nature of the interband optical transitions and values of the band gap in Cd$_{1-x}$Mn$_x$Te was determined.

PACS number(s): 73.40.Lq, 73.50.Pz

pdf