Journal of Physical Studies 16(3), Article 3704 [8 pages] (2012)
DOI: https://doi.org/10.30970/jps.16.3704

PECULIARITIES OF CONDUCTION MECHANISM IN n-ZrNiSn INTERMETALLIC SEMICONDUCTOR HEAVILY DOPED WITH Lu IMPURITY

Yu. V. Stadnyk^{1}, L. P. Romaka^{1}, E. K. Hlil^{2}, V. V. Romaka^{3}, A. M. Horyn^{1}, V. Ya. Krayovskyy^{3}
¹Ivan Franko National University of Lviv, 6, Kyryla and Mefodiya St., Lviv, UA--79005, Ukraine,
e-mail: stadnyk_yuriy@franko.lviv.ua
²Institut Néel, CNRS, BP 166, 38042, Grenoble Cedex 9, France
³National University ‟Lvivska Politechnika”, 12, S. Bandery St., Lviv, UA--79013, Ukraine

The crystal and electronic structure, energy state, electrokinetic and magnetic characteristics of the \emph{n}-ZrNiSn intermetallic semiconductor heavily doped with Lu acceptor impurity were investigated in ranges: $T=80\div400 \mathrm{K}$, $N_{\rm A}^{\rm Lu}=9.5\times10^{19}\ (x=0.005)\div9.5\times10^{21}$ \textrm{cm}$^{-3}$ ($x=0.5$). Peculiarities of crystal structure transformation and the existence region of Zr$_{1-x}$Lu$_{x}$NiSn solid solution were established. Insulator-metal transition (Anderson transition) expected by electronic structure calculations was found experimentally for the Zr$_{1-x}$Lu$_{x}$NiSn. Discussion of results was carried out in the Efros-Shklovsky model of a heavily doped and compensated semiconductor.

PACS number(s): 71.20.Nr; 72.20.Pr; 72.80.Ga; 75.20.Ck; 81.05.Hd