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Journal of Physical Studies 17(3), Article 3702 [5 pages] (2013)
DOI: https://doi.org/10.30970/jps.17.3702 PARAMETERS OF THE HIGH-ENERGY Δ1-MINIMUM OF THE CONDUCTION BAND IN n-GeS. V. Luniov, P. F. Nazarchuk, O. V. Burban
Lutsk National Technical University, Physics and Electrical Engineering
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On the basis of longitudinal piezoresistance experiments in the $n$-Ge crystals using the theory of deformation potential and the theory of anisotropic scattering the combination deformation potential constants, effective mass of the density of states, effective mass tensor components for $Δ_1$-minimum conduction band of $n$-Ge are defined. It is shown that the screening effect and scattering vary as a result of the realized $(L_1-Δ_1)$ absolute minimum type inversion in crystals of germanium about unaxial pressure along the crystallographic direction $[100]$. That was explained by different values of the screening radius as a screening factor for $L_1$ and $Δ_1$-minimum.
PACS number(s): 72.20.Fr, 72.10.-d