Journal of Physical Studies 18(4), Article 4601 [7 pages] (2014) DOI: https://doi.org/10.30970/jps.18.4601 THE STUDY OF X-STIMULATED EVOLUTION OF DEFECTS IN p-Si CRYSTALS THROUGH CAPACITIVE-MODULATION SPECTROSCOPY B. V. Pavlyk, D. P. Slobodzyan, R. M. Lys, J. A. Shykoryak, R. I. Didyk Ivan Franko National University of Lviv, Department of Electronics, 107, Tarnavsky St., Lviv, UA-79017, Ukraine pavlyk@electronics.lnu.edu.ua

Given study investigates defects to which correspond deep energy levels in the band gap of silicon through capacitive-modulation spectroscopy. It describes the defects evolution under the influence of X-irradiation. In addition, there has been set a limit dose value ($D<500$ Gy) of the restructuring process of structural defects in the \emph{p}-Si crystals according to Watkins mechanism.

PACS number(s): 61.72.Uf, 73.40.Qv, 78.70.-g

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