Journal of Physical Studies 24(4), Article 4701 [8 pages] (2020)
DOI: https://doi.org/10.30970/jps.24.4701

MODELING OF IDEALITY FACTOR VALUE IN n+–p–p+-Si STRUCTURE

O. Ya. Olikh , O. V. Zavhorodnii

Taras Shevchenko National University of Kyiv,
64/13, Volodymyrska St., Kyiv, UA-01601, Ukraine
e-mail: olikh@univ.kiev.ua

Received 25 August 2020; in final form 19 October 2020; accepted 22 October 2020; published online 01 December 2020

This paper presents the results of computer simulation of the ideality factor of silicon $n^+-p-p^+$ structure with iron contamination. The Solar Cells Capacitance Simulator (SCAPS) was the tool used for numerical simulation of these devices. The iron concentration range of $10^{10}-10^{13}$ cm$^{-3}$, the acceptor doping level range of $10^{15}-10^{17}$ cm$^{-3}$, the temperature range of $290-340$ K, and the base thickness range of $150-240$ $μ$m were used in the investigation. The double diode model was used to extract the ideality factor. The following cases were considered: (i) uniformly distributed lone interstitial iron atoms; (ii) coexistence of non-uniformly distributed $\mathrm{Fe}_i$ and $\mathrm{Fe}_i\mathrm{B}_s$. It has been shown that the ideality factor value is determined by a hole occurring on the $\mathrm{Fe}_i$ level, a trap location, and an intrinsic recombination contribution. The increase in the base thickness leads to a decrease in $n$ value. The sign of change in the ideality factor after $\mathrm{Fe}_i\mathrm{B}_s$ dissociation depends on temperature, doping level, and iron concentration.

Key words: ideality factor, silicon, $n^+$–$p$–$p^+$ structure, SCAPS, iron concentration

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