Journal of Physical Studies 25(3), Article 3701 [6 pages] (2021) DOI: https://doi.org/10.30970/jps.25.3701 PHOTOLUMINESCENCE ANALYSIS OF SHALLOW ACCEPTOR IN CdTe FILMS ON GaAs(100) SUBSTRATES Chikara Onodera1 , Masaaki Yoshida2  1Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan ycd1ngt@yahoo.co.jp 2Department of General Science and Education, Hachinohe National College of Technology, 16-1 Uwanotai, Tamonoki, Hachinohe, Aomori 039-1192, Japan yoshida-g@hachinohe-ct.ac.jp Received 29 October 2019; in final form 14 April 2021; accepted 11 May 2021; published online 13 July 2021

In this study, photoluminescence (PL) measurements are performed for analyzing shallow acceptor states in undoped cadmium telluride films on gallium arsenide substrates. PL and time-resolved photoluminescence spectra are analyzed in the vicinity of a 1.55 eV band. The residual impurity concentration in the undoped cadmium telluride film is greater than 1.5 $\times {10}^{18}$ cm$^{-3}$. By analyzing the peak shift of the 1.55 eV band as a function of time after pulsed excitation, the bound-to-bound reaction constant for the undoped cadmium telluride film on a gallium arsenide substrate is estimated to be 2.4 $\times {10}^{7}$ s$^{-1}$.

Key words: cadmium telluride, photoluminescence, time-resolved photoluminescence, acceptor impurity element

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