Journal of Physical Studies 26(2), Article 2801 [12 pages] (2022)
DOI: https://doi.org/10.30970/jps.26.2801

X-RAY DIFFRACTION CHARACTERIZATION OF NANOSTRUCTURED NATIVE OXIDE FILMS ON INDIUM SELENIDE BY MODIFIED SHERRER AND WILLIAMSON–HALL METHODS

S. I. Drapak{1,2}, S. V. Gavrylyuk3, Y. B. Khalavka2 , V. D. Fotiy1, P. M. Fochuk2 , O. I. Fediv4 

1 Photon-Quartz Design & Technology Ltd., 246, Holovna St., Chernivtsi, UA–58032, Ukraine,
2 Institute of Biology, Chemistry and Bioresources, Yuriy Fedkovych Chernivtsi National University,
25, Lesia Ukrainka St., Chernivtsi, UA–58012, Ukraine,
3 Institute of Applied Mathematics and Fundamental Sciences, Lviv Polytechnic National University,
12, Stepan Bandera St., Lviv, UA—79013, Ukraine,
4 Bukovinian State Medical University, 2, Theater Sq., Chernivtsi, UA–58000, Ukraine

Received 08 December 2021; in final form 14 February 2022; accepted 22 March 2022; published online 30 May 2022

Indium selenide belonging to the class of two-dimensional layered semiconductors is a promising material for nonlinear optical applications in the mid-infrared wavelength region as a detector and a source of THz waves; as the basis of various optoelectronic devices for the visible wavelength region (photodetectors, polarization-sensitive photodiodes, solar cells, phototransistors); as a matrix for hydrogen storage; as a substrate in planar nanotechnologies, etc. This compound is currently considered a useful middle ground between silicon and grapheme with great potential for manufacturing new-generation electronic and optoelectronic ultra-thin and ultra-fast nanodevices. That is why the question of InSe (both bulk and in the form of two-dimensional objects) stability in the air under ambient conditions becomes extremely relevant. Moreover, the results of recent theoretical and experimental studies on its stability are contradictive. This work is part of research aimed at studying the aging process of 2D layered compounds belonging to $A^3B^6$ family group and photosensitive devices based on them.

It is shown that the necessary conditions for the oxidation of layered indium selenide crystals during their long-term storage under ambient conditions are the presence of an atomically smooth cleaved surface (0001) in the absence of growth defects and mechanical damage, as well as daylight illumination. As follows from the X-ray diffraction (XRD) study, the native oxide films formed on the van der Waals surface (0001) of InSe are two-phase and consist of pure indium and diselenium pentoxide Se$_2$O$_5$ nanocrystallites. A modified Scherrer equation and the Williamson-Hall method with the involvement of various models were used to determine the average crystallite size of both types of the compounds and the intrinsic strain from the XRD peak broadening the analysis. The average values of stress and the bulk energy density of deformation were also determined for pure indium nanocrystallites. Physical and chemical phenomena that lead to the presence of compressive stresses in both In and Se$_2$O$_5$ nanocrystallites and account for the fact that the film surface is formed by smaller crystallites than in the oxide volume have been analyzed.

Key words: indium selenide, native oxide, thin films, X-ray diffraction analysis, X-ray phase analysis, elastic properties.

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