Journal of Physical Studies 26(4), Article 4601 [5 pages] (2022)
DOI: https://doi.org/10.30970/jps.26.4601

FEATURES OF GROWING Si- AND Si1-xGex-SINGLE-CRYSTAL FILMS FROM SOLUTION-MELT BASED ON TIN

A. Sh. Razzokov{1} , A. S. Saidov{2} , V. V. Girzhon{3} , O. V. Smolyakov{3} 

{1}Urgench State University, 14, Kh. Alimdjan St., Urgench, 220100, Uzbekistan,
{2} Physical-Technical Institute NPO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan,
2B, Ch. Aitmatov St., Tashkent, 100084, Uzbekistan,
{3}Zaporizhzhia National University, 66, Zhukovsky St., Zaporizhzhia, UA–69063, Ukraine
e-mail: a.razzokov777@gmail.com

Received 10 May 2022; in final form 05 July 2022; accepted 01 August 2022; published online 01 December 2022

The features of variband single-crystal structures based on Si$_{1-x}$Ge$_{x}$ $(0<x<1)$, which have been grown on Si(111) substrates from a tin solution-melt by liquid-phase epitaxy have been experimentally investigated and analyzed. A mechanism for the growth of such structures is proposed, and the reason for the greater thickness of the deposited films on the upper substrates for liquid-phase epitaxy is explained based on the Rayleigh-Taylor instability phenomenon. Optimal technological regimes for obtaining epitaxial layers and structures are predicted.

Key words: epitaxy, solution-melt, substrate, Rayleigh–Taylor instability, Brownian motion, diffusion.

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