Journal of Physical Studies 27(1), Article 1701 [5 pages] (2023)
DOI: https://doi.org/10.30970/jps.27.1701

FIELD-EFFECT TRANSISTOR BASED ON GRAPHENE — POROUS SILICON HYBRID STRUCTURE

I. B. Olenych , Ya. V. Boyko 

Ivan Franko National University of Lviv,
50, Drahomanov St., Lviv, 79005, Ukraine,
e-mail: igor.olenych@lnu.edu.ua

Received 28 October 2022; in final form 23 January 2023; accepted 24 January 2023; published online 04 March 2023

In this study, reduced graphene oxide (rGO) – porous silicon (PS) hybrid structures are suggested to create a field-effect transistor (FET). The electrical properties and switching characteristics of the obtained rGO-PS-based FET were studied in both DC and AC modes. A significant influence of the supporting PS layer on the transport of charge carriers in the graphene film was established. A decrease in resistance and an increase in the capacity of the graphene FET channel due to photogenerated charge carriers in the porous layer were found. Based on the impedance spectra, the parameters of the equivalent circuit model of the rGO-PS-based FET for different gate voltages are determined.

Key words: field-effect transistor, graphene, porous silicon, hybrid structure, current-voltage characteristics, impedance.

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