DOI: https://doi.org/10.30970/jps.02.536
THE PECULIARITIES OF THE LOCALIZED STATES DISTRIBUTION IN THE FORBIDDEN GAP OF In4Se3 CRYSTAL
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Journal of Physical Studies 2(4), 536–540 (1998)
DOI: https://doi.org/10.30970/jps.02.536 THE PECULIARITIES OF THE LOCALIZED STATES DISTRIBUTION IN THE FORBIDDEN GAP OF In4Se3 CRYSTAL |
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L. S. Demkiv, T. M. Demkiv, V. P. Savchyn, J. M. Stakhira
The Ivan Franko State University of Lviv, Chair of Semiconductor Physics
50 Drahomanov Str., Lviv, UA–290005, Ukraine
The temperature dependence of jump electroconductivity $σ(T)$ on constant current and spectral dependence of absorption coefficient in layered In$_4$Se$_3$ crystals are investigated. The electroconductivity under low temperature has been found to be subject to a $\lnσ\sim T^{-1/2}$ low, stipulated by the minimum in energy spectrum of localized states. The width of Coulomb gap is max ($Δ\sim$0.1 еV) for the In$_4$Se$_3$ intermediate compensation and it is min ($Δ\sim$10~меV) for the compensation sample with electron conductivity. The quality model of energy distribution of localized states in the In$_4$Se$_3$ crystals has been proposed and on its basis non-structural absorption bands have been identified in the energy range of 0.17-0.32~eV as being caused by the localized state–band transition.