DOI: https://doi.org/10.30970/jps.03.492
THE POTENTIAL ENERGY OF A CHARGE NEAR THE SURFACE OF THE SPHERICAL SEMICONDUCTOR MICROCRYSTAL AT THE PRESENCE OF INTERMEDIATE LAYER OF VARYING DIELECTRIC CONSTANT
|
Journal of Physical Studies 3(4), 492–497 (1999)
DOI: https://doi.org/10.30970/jps.03.492 THE POTENTIAL ENERGY OF A CHARGE NEAR THE SURFACE OF THE SPHERICAL SEMICONDUCTOR MICROCRYSTAL AT THE PRESENCE OF INTERMEDIATE LAYER OF VARYING DIELECTRIC CONSTANT |
|
V. I. Boichuk, R. Yu. Kubay
Drohobych Ivan Franko State Pedagogical University,
Department of Theoretical Physics,
24 Franko Str., Drohobych, UA-82100, Lviv Region, Ukraine
In the present paper the effect of the semiconductor heterosystem interface (spherical microcrystal–% matrix) on a charge patricle is studied. In a flat interfacial zone the case of existence of the intermediate layer with the dielectric constant as a function of distance is discussed. Using the Green's function the potential energy of a charge as a function of distance to the centre of microcrystal with various dielectric constants of the heterosystem is determined.