Journal of Physical Studies 4(1), 73–77 (2000) DOI: https://doi.org/10.30970/jps.04.73 EXACT SOLUTION OF HYDROGEN PASSIVATION OF SILICON PROBLEM

P. M. Gorley, M. V. Voznyy
Yuriy Fed'kovych Chernivtsi State University, Chair of Physical Electronics,
2 Kotsiubyns'kyi St., Chernivtsi, UA-58012, Ukraine

General solutions in the stationary case and in the absence of hydrogen atoms diffusion have been obtained for the system of evolution equations describing the hydrogen passivation of silicon. Using Lie groups theory and the singular manifold method the travelling waves type solution was defined analytically; the systems of equations for scale–invariant solutions determination have been obtained. The ana\-lysis of the system have been carried out taking into account diffusion and dissociation mechanisms. It was established that free hydrogen diffusion in the sample and the ‟defect–hydrogen” complexes dissociation spoil passivation. The exact results obtained make it possible to predict the spatial and temporal defects distribution during the hydrogen passivation of silicon depending on the experimental conditions.

ps pdf