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Journal of Physical Studies 7(3), 288–290 (2003)
DOI: https://doi.org/10.30970/jps.07.288 THE THRESHOLD CURRENT REDUCTION IN InGaAsSb STRUCTURE WITH STRAIN LAYERSО. Машошіна, В. Лисак, І. Сухойванов
Kharkiv National University of Radioelectronics, |
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In this work the theoretical investigation of temperature dependence of the threshold current in quantum well structure of mid-IR range with strain layers based on InGaAsSb/AlGaAsSb structure has been made. As an example of processes which have an influence on the threshold current temperature dependence the Auger recombination have been chosen. This process exerts the largest influence on the temperature dependence. The obtained Auger recombination versus As mole fraction dependence illustrates the way of this lost mechanism reduction by fitting structure material and its mole fractions in such lasers. The presence of such a result allows to reduce nonradiative losses and the threshold current temperature dependence.
PACS number(s): 42.55.Px, 79.20.Fv