DOI: https://doi.org/10.30970/jps.14.1703
EXCITON'S ENERGY IN SEMICONDUCTOR NANOFILMS
V. M. Kramar
Yuriy Fed'kovych Chernivtsi National University,
2, Kotsyubynsky Str., Chernivtsi,
58012, Ukraine
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Journal of Physical Studies 14(1), Article 1703 [6 pages] (2010)
DOI: https://doi.org/10.30970/jps.14.1703 EXCITON'S ENERGY IN SEMICONDUCTOR NANOFILMSV. M. Kramar
Yuriy Fed'kovych Chernivtsi National University, |
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An analytical dependence of the exciton's ground state binding energy on the thickness of the flat semiconductor nanofilm disregarding interactions with phonons has been found by Bethe's variational method. This allows calculating non-phonon transitions energy in various thickness films. Calculations have been made by using model of rectangular quantum well with the finite depth for Al$_{0.3}$Ga$_{0.7}$As/GaAs/Al$_{0.3}$Ga$_{0.7}$As and CdS/HgS/CdS nanofilms as an example.
PACS number(s): 71.35.Cc; 72.20.Mf; 78.67.De