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Journal of Physical Studies 15(2), Article 2601 [7 pages] (2011)
DOI: https://doi.org/10.30970/jps.15.2601 CONFINED AND INTERFACE OPTICAL PHONONS IN THE SEMICONDUCTOR ELLIPTIC QUANTUM WIRE WITH THE AXIAL HETEROSTRUCTUREV. A. Holovatsky, V. I. Gutsul
Chernivtsi National University, 2, Kotsyubynskoho St.,
Chernivtsi, 58012, Ukraine |
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In the framework of the dielectric continuum model there has been performed the calculation of energy spectra of confined and interface optical phonons in open elliptic quantum dot GaAs, surrounded by two equal quantum anti-dots AlAs along the elliptic quantum wire GaAs, placed into vacuum. It is shown that the energies of confined optical phonons in this semiconductor nanoheterosystem are fixed by the energies of longitudinal vibrations in the respective massive crystals creating the nanosystem. The dependences of interface optical phonons energies on geometrical sizes of quantum dot and the ratio between ellipse semi-widths $a/b$ confining quantum wire are observed. It is shown that the energy spectra of these phonons in the elliptic quantum wire consist of energy levels corresponding to the odd and even phonon states.
PACS number(s): 68.65.Hb, 68.65.La, 74.25.Kc, 79.60.Jv